IndiumV3, Main, Repository, bibRecord, 000E31

Effects of growth rate on InP nanowires morphology and crystal structure

Identifieur interne : 000E31 ( Main/Repository ); précédent : 000E30; suivant : 000E32

Effects of growth rate on InP nanowires morphology and crystal structure

Auteurs : RBID : Pascal:13-0357980

Descripteurs français

Pascal (Inist)
- Taux croissance, Nanofil, Nanomatériau, Morphologie cristalline, Structure cristalline, Semiconducteur III-V, Composé III-V, Synthèse nanomatériau, Dépôt chimique phase vapeur, Méthode MOCVD, Or, Nanoparticule, Catalyseur, Défaut plan, Zinc, Précurseur, Microscopie électronique transmission, Phosphure d'indium, Substrat indium phosphure, Substrat InP, InP, Substrat métal, 8110A, 8107V, 8107, 6166.
Wicri :
- concept : Or, Zinc.

English descriptors

KwdEn :
- CVD, Catalysts, Crystal morphology, Crystal structure, Gold, Growth rate, III-V compound, III-V semiconductors, Indium phosphide, MOCVD, Nanomaterial synthesis, Nanoparticles, Nanostructured materials, Nanowires, Plane defects, Precursor, Transmission electron microscopy, Zinc.

Abstract

We report the effects of growth rate on the crystal structure of InP nanowires grown on InP (111)B substrate by metal organic chemical vapour deposition (MOCVD) using gold nanoparticles as catalysts. Results showed that slower growth rate helps to reduce planar defects and the crystal structure changes from wurtzite to zinc-blende with increasing both group III and V precursors flows. Nonetheless, the tapering effect can be reduced with growth rate. High resolution transmission electron microscopy (HR-TEM) confirmed that the crystal structure changes with growth rate.

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Pascal:13-0357980

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of growth rate on InP nanowires morphology and crystal structure</title>
<author><name sortKey="Paiman, S" uniqKey="Paiman S">S. Paiman</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Faculty of Science, Universiti Putra Malaysia</s1>
<s2>43400 Serdang, Selangor</s2>
<s3>MYS</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Malaisie</country>
<wicri:noRegion>43400 Serdang, Selangor</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Functional Device Laboratory, Institute of Advanced Technology, Universiti Putra Malaysia, UPM</s1>
<s2>43400 Serdang, Selangor</s2>
<s3>MYS</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Malaisie</country>
<wicri:noRegion>43400 Serdang, Selangor</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gao, Q" uniqKey="Gao Q">Q. Gao</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tan, H H" uniqKey="Tan H">H. H. Tan</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
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</author>
<author><name sortKey="Jagadish, C" uniqKey="Jagadish C">C. Jagadish</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Australie</country>
<wicri:noRegion>Canberra, ACT 0200</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zhang, X" uniqKey="Zhang X">X. Zhang</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland</s1>
<s2>St Lucia, QLD 4072</s2>
<s3>AUS</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>St Lucia, QLD 4072</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zou, J" uniqKey="Zou J">J. Zou</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland</s1>
<s2>St Lucia, QLD 4072</s2>
<s3>AUS</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Australie</country>
<wicri:noRegion>St Lucia, QLD 4072</wicri:noRegion>
</affiliation>
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<publicationStmt><idno type="inist">13-0357980</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0357980 INIST</idno>
<idno type="RBID">Pascal:13-0357980</idno>
<idno type="wicri:Area/Main/Corpus">000466</idno>
<idno type="wicri:Area/Main/Repository">000E31</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CVD</term>
<term>Catalysts</term>
<term>Crystal morphology</term>
<term>Crystal structure</term>
<term>Gold</term>
<term>Growth rate</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium phosphide</term>
<term>MOCVD</term>
<term>Nanomaterial synthesis</term>
<term>Nanoparticles</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Plane defects</term>
<term>Precursor</term>
<term>Transmission electron microscopy</term>
<term>Zinc</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Taux croissance</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Morphologie cristalline</term>
<term>Structure cristalline</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Synthèse nanomatériau</term>
<term>Dépôt chimique phase vapeur</term>
<term>Méthode MOCVD</term>
<term>Or</term>
<term>Nanoparticule</term>
<term>Catalyseur</term>
<term>Défaut plan</term>
<term>Zinc</term>
<term>Précurseur</term>
<term>Microscopie électronique transmission</term>
<term>Phosphure d'indium</term>
<term>Substrat indium phosphure</term>
<term>Substrat InP</term>
<term>InP</term>
<term>Substrat métal</term>
<term>8110A</term>
<term>8107V</term>
<term>8107</term>
<term>6166</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Or</term>
<term>Zinc</term>
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<front><div type="abstract" xml:lang="en">We report the effects of growth rate on the crystal structure of InP nanowires grown on InP (111)B substrate by metal organic chemical vapour deposition (MOCVD) using gold nanoparticles as catalysts. Results showed that slower growth rate helps to reduce planar defects and the crystal structure changes from wurtzite to zinc-blende with increasing both group III and V precursors flows. Nonetheless, the tapering effect can be reduced with growth rate. High resolution transmission electron microscopy (HR-TEM) confirmed that the crystal structure changes with growth rate.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Effects of growth rate on InP nanowires morphology and crystal structure</s1>
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<fA11 i1="01" i2="1"><s1>PAIMAN (S.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GAO (Q.)</s1>
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<fA11 i1="03" i2="1"><s1>TAN (H. H.)</s1>
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<fA11 i1="06" i2="1"><s1>ZOU (J.)</s1>
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<fA14 i1="01"><s1>Department of Physics, Faculty of Science, Universiti Putra Malaysia</s1>
<s2>43400 Serdang, Selangor</s2>
<s3>MYS</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Functional Device Laboratory, Institute of Advanced Technology, Universiti Putra Malaysia, UPM</s1>
<s2>43400 Serdang, Selangor</s2>
<s3>MYS</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University</s1>
<s2>Canberra, ACT 0200</s2>
<s3>AUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Materials Engineering and Centre for Microscopy and Microanalysis, The University of Queensland</s1>
<s2>St Lucia, QLD 4072</s2>
<s3>AUS</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<fA20><s1>100-105</s1>
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<fA21><s1>2013</s1>
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<fC01 i1="01" l="ENG"><s0>We report the effects of growth rate on the crystal structure of InP nanowires grown on InP (111)B substrate by metal organic chemical vapour deposition (MOCVD) using gold nanoparticles as catalysts. Results showed that slower growth rate helps to reduce planar defects and the crystal structure changes from wurtzite to zinc-blende with increasing both group III and V precursors flows. Nonetheless, the tapering effect can be reduced with growth rate. High resolution transmission electron microscopy (HR-TEM) confirmed that the crystal structure changes with growth rate.</s0>
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<s5>04</s5>
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<s5>30</s5>
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Effects of growth rate on InP nanowires morphology and crystal structure

Effects of growth rate on InP nanowires morphology and crystal structure

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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